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| 2SC2734 Silicon NPN Epitaxial Application * UHF frequency converter * Local oscillator, wide band amplifier Outline MPAK 3 1 2 1. Emitter 2. Base 3. Collector 2SC2734 Absolute Maximum Ratings (Ta = 25C) Item Collector to base voltage Collector to emitter voltage Emitter to base voltage Collector current Collector power dissipation Junction temperature Storage temperature Symbol VCBO VCEO VEBO IC PC Tj Tstg Ratings 20 11 3 50 150 150 -55 to +150 Unit V V V mA mW C C Electrical Characteristics (Ta = 25C) Item Collector to base breakdown voltage Symbol V(BR)CBO Min 20 11 3 -- -- 20 1.4 -- -- Typ -- -- -- -- -- 90 3.5 0.9 15 Max -- -- -- 0.5 0.7 200 -- 1.5 -- GHz pF dB Unit V V V A V Test conditions I C = 10 A, IE = 0 I C = 1 mA, RBE = I E = 10 A, IC = 0 VCB = 10 V, IE = 0 I C = 10 mA, IB = 5 mA VCE = 10 V, IC = 5 mA VCE = 10 V, IC = 10 mA VCB = 10 V, IE = 0, f = 1 MHz VCC = 6 V, IC = 2 mA, f = 900 MHz, f OSC = 930 MHz (0dBm), f out = 30 MHz VCC = 6 V, IC = 2 mA, f = 900 MHz, f OSC = 930 MHz (0dBm), f out = 30 MHz VCC = 6 V, IC = 5 mA, f = 930 MHz Collector to emitter breakdown V(BR)CEO voltage Emitter to base breakdown voltage Collector cutoff current Collector to emitter saturation voltage DC current transfer ratio Gain bandwidth product Collector output capacitance Conversion gain V(BR)EBO I CBO VCE(sat) hFE fT Cob CG Noise figure NF -- 9 -- dB Oscillating output voltage Note: Marking is "GC". VOSC -- 140 -- mV 2 2SC2734 Maximum Collector Dissipation Curve Collector Power Dissipation PC (mW) 150 DC Current Transfer Ratio hFE DC Current Transfer Ratio vs. Collector Current 200 VCE = 10 V 160 100 120 80 50 40 0 0 50 100 150 Ambient Temperature Ta (C) 1 2 5 10 20 Collector Current IC (mA) 50 Gain Bandwidth Product vs. Collector Current Collector Output Capacitance Cob (pF) 5 Gain Bandwidth Product fT (GHz) VCE = 10 V 4 2.0 Collector Output Capacitance vs. Collector to Base Voltage f = 1 MHz IE = 0 1.6 3 1.2 2 0.8 0.4 1 0 1 2 5 10 20 Collector Current IC (mA) 50 0 1 2 5 10 20 50 Collector to Base Voltage VCB (V) 3 2SC2734 Reverse Transfer Capacitance vs. Collector to Base Voltage Reverse Transfer Capacitance Cre (pF) 2.0 f = 1 MHz Emitter Common 20 VCC = 6 V f = 900 MHz fosc = 930 MHz (0 dBm) fout = 30 MHz Conversion Gain vs. Collector Current Conversion Gain CG (dB) 1.6 16 1.2 12 0.8 0.4 8 4 0 1 2 5 10 20 50 Collector to Base Voltage VCB (V) 0 2 4 6 8 Collector Current IC (mA) 10 Noise Figure vs. Collector Current Oscillating Output Voltage VOSC (mV) 20 200 Oscillating Output Voltage vs. Collector Current 16 Noise Figure NF (dB) 160 12 120 8 4 VCC = 6 V f = 900 MHz fosc = 930 MHz (0 dBm) fout = 30 MHz 1 2 3 4 Collector Current IC (mA) 5 80 VCC = 6 V f = 930 MHz 40 0 0 2 4 6 8 Collector Current IC (mA) 10 4 2SC2734 Oscillating Output Voltage vs. Supply Voltage Oscillating Output Voltage VOSC (mV) 200 2nd I.M. Distortion 2nd I.M.D. (dB) 50 2nd I.M. Distortion vs. Collector Current 160 40 120 30 80 IC = 5 mA f = 930 MHz 20 40 10 VCC = 10 V f1 = 600 MHz f2 = 650 MHz f2nd IM = 1,250 MHz Vout = 103 dB 4 8 12 16 Collector Current IC (mA) 20 0 2 4 6 8 Supply Voltage VCC (V) 10 0 3rd I.M. Distortion vs. Collector Current 70 3rd I.M. Distortion 3rd I.M.D. (dB) f = 700 MHz Power Gain vs. Frequency 60 Power Gain PG (dB) 550 MHz 50 VCC = 10 V f1 = 600 MHz f2 = 650 MHz f3rd IM = 550 MHz 700 MHz Vout = 103 dB 0 4 8 12 16 Collector Current IC (mA) 20 12 8 40 4 VCC = 10 V IC = 10 mA Pin = -30 dBm 500 600 700 800 900 Frequency fT (MHz) 1,000 30 0 20 -4 400 5 2SC2734 Conversion Gain, Noise Figure Test Curcuit VBB C2 fosc = 930 MHz (0 dBm) L5 L4 L3 L1 L2 100 0.047 * D.U.T. 8p 12 p L6 1k C3 200 80 p VCC fout = 30 MHz RL = 50 200 p * **** Disk Capacitor Unit R : C: F L:H 23 L1 : 1 mm Enameled Copper wire 90 120 11 4 22 7 L2 : 1 mm Enameled Copper wire 90 20 90 13 130 13 3 130 11 L4 : 1 mm Enameled Copper wire 90 90 7 7 L3 : 1 mm Enameled Copper wire Unit : mm L5 : Bobbin 5 mm inside dia, 0.2 mm 20 Turns Enameled Copper wire L6 : 0.5 mm Enameled Copper wire 1 Turn inside dia 6 mm C1 : 20 pF max. Air Trimmer Condenser C2, C3 : 1000 pF Air Core Capacitor 6 2SC2734 VOSC Test Circuit L3 1000 p VCC Ferrite Bead D.U.T. 9p L2 6.8 k VOSC Output 1SV70 470 L1 120 k 1,000 p VT 1.2 p 330 2,200 p Unit C : F R: VBB 26 L1 : 1 mm Enameled Copper wire 10 5 L2 : 0.8 mm Enameled Copper wire L3 : 0.3 mm Enameled Copper wire, 10 Turns with 470 Resistor 8 7 2SC2734 Circuit Example-UHF Wide Bandwidth Amplifier (f = 500 MHz to 950 MHz) 92 2p Output RL = 50 L3 L1 L2 5.6 k L5 L6 1.2 p Input Rg = 50 3p 1.5 p D.U.T. 2p 3p 1,000 p 1,000 p VBB 1,000 p Unit R : C: F VCC L1 : 0.5 mm Copper wire 5 Turns inside dia 3 mm L2 : 0.5 mm Copper wire 2 Turns inside dia 2 mm L3 : 0.5 mm Copper wire 2 Turns inside dia 2 mm L4 : 0.5 mm Copper wire 1.5 Turns inside dia 2 mm L5 : 0.5 mm Copper wire 4 Turns inside dia 2 mm L6 : 0.5 mm Copper wire 3 Turns inside dia 2 mm 8 Unit: mm 0.65 0.10 3 - 0.4 + 0.05 - 0.16 - 0.06 + 0.10 1.5 0.15 + 0.2 - 0.6 0 - 0.1 0.95 0.95 1.9 0.2 2.95 0.2 0.3 + 0.2 1.1 - 0.1 0.65 2.8 Hitachi Code JEDEC EIAJ Weight (reference value) MPAK -- Conforms 0.011 g Cautions 1. Hitachi neither warrants nor grants licenses of any rights of Hitachi's or any third party's patent, copyright, trademark, or other intellectual property rights for information contained in this document. Hitachi bears no responsibility for problems that may arise with third party's rights, including intellectual property rights, in connection with use of the information contained in this document. 2. Products and product specifications may be subject to change without notice. Confirm that you have received the latest product standards or specifications before final design, purchase or use. 3. Hitachi makes every attempt to ensure that its products are of high quality and reliability. However, contact Hitachi's sales office before using the product in an application that demands especially high quality and reliability or where its failure or malfunction may directly threaten human life or cause risk of bodily injury, such as aerospace, aeronautics, nuclear power, combustion control, transportation, traffic, safety equipment or medical equipment for life support. 4. Design your application so that the product is used within the ranges guaranteed by Hitachi particularly for maximum rating, operating supply voltage range, heat radiation characteristics, installation conditions and other characteristics. Hitachi bears no responsibility for failure or damage when used beyond the guaranteed ranges. Even within the guaranteed ranges, consider normally foreseeable failure rates or failure modes in semiconductor devices and employ systemic measures such as failsafes, so that the equipment incorporating Hitachi product does not cause bodily injury, fire or other consequential damage due to operation of the Hitachi product. 5. This product is not designed to be radiation resistant. 6. No one is permitted to reproduce or duplicate, in any form, the whole or part of this document without written approval from Hitachi. 7. Contact Hitachi's sales office for any questions regarding this document or Hitachi semiconductor products. Hitachi, Ltd. Semiconductor & Integrated Circuits. Nippon Bldg., 2-6-2, Ohte-machi, Chiyoda-ku, Tokyo 100-0004, Japan Tel: Tokyo (03) 3270-2111 Fax: (03) 3270-5109 URL NorthAmerica : http:semiconductor.hitachi.com/ Europe : http://www.hitachi-eu.com/hel/ecg Asia (Singapore) : http://www.has.hitachi.com.sg/grp3/sicd/index.htm Asia (Taiwan) : http://www.hitachi.com.tw/E/Product/SICD_Frame.htm Asia (HongKong) : http://www.hitachi.com.hk/eng/bo/grp3/index.htm Japan : http://www.hitachi.co.jp/Sicd/indx.htm For further information write to: Hitachi Semiconductor (America) Inc. 179 East Tasman Drive, San Jose,CA 95134 Tel: <1> (408) 433-1990 Fax: <1>(408) 433-0223 Hitachi Europe GmbH Electronic components Group Dornacher Strae 3 D-85622 Feldkirchen, Munich Germany Tel: <49> (89) 9 9180-0 Fax: <49> (89) 9 29 30 00 Hitachi Europe Ltd. Electronic Components Group. Whitebrook Park Lower Cookham Road Maidenhead Berkshire SL6 8YA, United Kingdom Tel: <44> (1628) 585000 Fax: <44> (1628) 778322 Hitachi Asia Pte. Ltd. 16 Collyer Quay #20-00 Hitachi Tower Singapore 049318 Tel: 535-2100 Fax: 535-1533 Hitachi Asia Ltd. Taipei Branch Office 3F, Hung Kuo Building. No.167, Tun-Hwa North Road, Taipei (105) Tel: <886> (2) 2718-3666 Fax: <886> (2) 2718-8180 Hitachi Asia (Hong Kong) Ltd. Group III (Electronic Components) 7/F., North Tower, World Finance Centre, Harbour City, Canton Road, Tsim Sha Tsui, Kowloon, Hong Kong Tel: <852> (2) 735 9218 Fax: <852> (2) 730 0281 Telex: 40815 HITEC HX Copyright ' Hitachi, Ltd., 1999. All rights reserved. Printed in Japan. |
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